?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FDA20N50_f109 rev.c0 FDA20N50_f109 n-channel unifet tm mosfet march 2013 FDA20N50_f109 n-channel unifet tm mosfet 500 v, 20 a, 230 m ? features ?r ds(on) = 230 m? (max.) @ v gs = 10 v, i d = 10 a ? low gate charge (typ. 45.6 nc) ?low c rss (typ. 27 pf) ? 100% avalanche tested ? improved dv/dt capability applications ?pdp tv ? uninterruptible power supply ? ac-dc power supply description unifet tm mosfet is fairchild semiconductor ? ?s high voltage mosfet family based on planar stripe and dmos technology. this mosfet is tailored to reduce on-state resistance, and to provide better switching performance and higher avalanche energy strength. this device fami ly is suitable for switching power converter applications such as power factor correction (pfc), flat panel display (fpd) tv power, atx and electronic lamp ballasts. d g s g d s to-3p absolute maximum ratings symbol parameter FDA20N50_f109 unit v dss drain-source voltage 500 v i d drain current - continuous (t c = 25 ? c) - continuous (t c = 100 ? c) 22 13.2 a a i dm drain current - pulsed (note 1) 88 a v gss gate-source voltage ? 30 v e as single pulsed avalanche energy (note 2) 1110 mj i ar avalanche current (note 1) 22 a e ar repetitive avalanche energy (note 1) 28.0 mj dv/dt peak diode recovery dv/dt (note 3) 20 v/ns p d power dissipation (t c = 25 ? c) - derate above 25 ? c 280 2.3 w w/ ? c t j, t stg operating and storage temperature range -55 to +150 ? c t l maximum lead temperature for soldering purpose, 1/8? from case for 5 seconds 300 ? c ? thermal characteristics symbol parameter FDA20N50_f109 unit r ? jc thermal resistance, junction-to-case, max. 0.44 ? c/ w r ? ja thermal resistance, junction-to-ambient, max. 40 ? c/ w
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FDA20N50_f109 rev.c0 package marking and ordering information device marking device package reel size tape width quantity FDA20N50 FDA20N50_f109 to-3pn -- -- 30 electrical characteristics t c = 25c unless otherwise noted symbol parameter conditions min typ max unit off characteristics bv dss drain-source breakdown voltage v gs = 0v, i d = 250 ? a, t j = 25 ? c 500 -- -- v ? bv dss / ? t j breakdown voltage temperature coefficient i d = 250 ? a, referenced to 25 ? c -- 0.50 -- v/ ? c i dss zero gate voltage drain current v ds = 500v, v gs = 0v v ds = 400v, t c = 125 ? c -- -- -- -- 1 10 ? a ? a i gssf gate-body leakage current, forward v gs = 30v, v ds = 0v -- -- 100 na i gssr gate-body leakage current, reverse v gs = -30v, v ds = 0v -- -- -100 na on characteristics v gs(th) gate threshold voltage v ds = v gs , i d = 250 ? a 3.0 -- 5.0 v r ds(on) static drain-source on-resistance v gs = 10v, i d = 11a -- 0.20 0.23 ? g fs forward transconductance v ds = 40v, i d = 11a -- 24.6 -- s dynamic characteristics c iss input capacitance v ds = 25v, v gs = 0v, f = 1.0mhz -- 2400 3120 pf c oss output capacitance -- 355 465 pf c rss reverse transfer capacitance -- 27 -- pf switching characteristics t d(on) turn-on delay time v dd = 250v, i d = 20a r g = 25 ? (note 4) -- 95 200 ns t r turn-on rise time -- 375 760 ns t d(off) turn-off delay time -- 100 210 ns t f turn-off fall time -- 105 220 ns q g total gate charge v ds = 400v, i d = 20a v gs = 10v (note 4) -- 45.6 59.5 nc q gs gate-source charge -- 14.8 -- nc q gd gate-drain charge -- 21.6 -- nc drain-source diode characteristics and maximum ratings i s maximum continuous drain-source diode forward current -- -- 20 a i sm maximum pulsed drain-source diode forward current -- -- 80 a v sd drain-source diode forward voltage v gs = 0v, i s = 22a -- -- 1.4 v t rr reverse recovery time v gs = 0v, i s = 20a di f /dt =100a/ ? s -- 507 -- ns q rr reverse recovery charge -- 7.20 -- ? c notes: 1. repetitive rating: pulse width limit e d by maximum junction temperature 2. l = 4.1mh, i as = 22a, v dd = 50v, r g = 25 ? , starting t j = 25 ?c 3. i sd ? 22a, di/dt ? 200a/ ? s, v dd ? bv dss , starting t j = 25 ?c 4. essentially independent of operating temperature typical characteristics
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FDA20N50_f109 rev.c0 typical performance characteristics figure 1. on-region characteristics figure 2. transfer characteristics 10 -1 10 0 10 1 10 0 10 1 v gs top : 15.0 v 10.0 v 8.0 v 7.0 v 6.5 v 6.0 v bottom : 5.5 v * notes : 1. 250 ? s pulse test 2. t c = 25 o c i d , drain current [a] v ds , drain-source voltage [v] 24681 01 2 10 0 10 1 10 2 150 o c 25 o c -55 o c * notes : 1. v ds = 40v 2. 250 ? s pulse test i d , drain current [a] v gs , gate-source voltage [v] figure 3. on-resistance variation vs. figure 4. body diode forward voltage drain current and gate voltage v ariati on vs. s ource current and temperatue 0.20.40.60.81.01.21.41.6 10 0 10 1 150 o c *notes : 1. v gs = 0v 2. 250 ? s pulse test 25 o c i dr , reverse drain current [a] v sd , source-drain voltage [v] 0 153045607590 0.0 0.2 0.4 0.6 0.8 v gs = 20v v gs = 10v * note : t j = 25 o c r ds(on) [ ? ], drain-source on-resistance i d , drain current [a] figure 5. capacitance characteristics figure 6. gate charge characteristics 0 1 02 03 04 05 0 0 2 4 6 8 10 12 v ds = 250v v ds = 100v v ds = 400v * note : i d = 20a v gs , gate-source voltage [v] q g , total gate charge [nc] 10 -1 10 0 10 1 0 1000 2000 3000 4000 5000 6000 c iss = c gs + c gd (c ds = shorted) c oss = c ds + c gd c rss = c gd * note : 1. v gs = 0 v 2. f = 1 mhz c rss c oss c iss capacitances [pf] v ds , drain-source voltage [v]
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FDA20N50_f109 rev.c0 typical performance characteristics (continued) figure 7. breakdown voltage variation figure 8. on-resistance variation vs. temperature vs. temperature -100 -50 0 50 100 150 200 0.8 0.9 1.0 1.1 1.2 * notes : 1. v gs = 0 v 2. i d = 250 ? a bv dss , (normalized) drain-source breakdown voltage t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 5.5 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] -100 -50 0 50 100 150 200 0.0 0.5 1.0 1.5 2.0 2.5 3.0 * notes : 1. v gs = 10 v 2. i d = 11 a r ds(on) , (normalized) drain-source on-resistance t j , junction temperature [ o c] figure 9. safe operating area figure 10. maximum drain current vs. case temperature 25 50 75 100 125 150 0 5 10 15 20 25 i d , drain current [a] t c , case temperature [ o c] 10 0 10 1 10 2 10 3 10 -1 10 0 10 1 10 2 100 ms 1 ms 10 ? s dc 10 ms 100 ? s operation in this area is limited by r ds(on) * notes : 1. t c = 25 o c 2. t j = 150 o c 3. single pulse i d , drain current [a] v ds , drain-source voltage [v] figure 11. transient thermal response curve 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 -2 10 -1 10 0 * n otes : 1 . z ? jc (t) = 0.44 o c/w max. 2 . d u ty f a cto r, d = t 1 /t 2 3 . t jm - t c = p dm * z ? jc (t) single pulse d=0.5 0.02 0.2 0.05 0.1 0.01 z ? jc (t), thermal response t 1 , s q uare w ave p ulse d uration [sec] t 1 p dm t 2
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FDA20N50_f109 rev.c0 gate charge test circuit & waveform resistive switching test circuit & waveforms unclamped inductive switching test circuit & waveforms
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FDA20N50_f109 rev.c0 peak diode recovery dv/dt test circuit & waveforms
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FDA20N50_f109 rev.c0 mechanical dimensions dimensions in millimeters to-3pn
FDA20N50_f109 n-channel unifet tm mosfet ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FDA20N50_f109 rev.c0 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild semiconductor and/or its gl obal subsidiaries, and is not intended to be an exhaustive list of all such trademarks. *trademarks of system general corporation, used under license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes with out further notice to any products herein to improve reliability, function, or design. fairchild does not assume an y liability arising out of th e application or use of any product or circuit described herein; neither does it convey an y license under its patent rights, nor the rights of others. these specifications do not expand the terms of fairchild?s wo rldwide terms and conditions , specifically the warranty therein, which covers these products. life support policy fairchild?s products are not authorized fo r use as critical components in life support devices or systems without the express written approval of fa irchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform w hen properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the user. 2. a critical component in any component of a life support, device, or system whose failure to perform can be reasonably ex pected to cause the failure of the life support device or system, or to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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